Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications

P. Heremans; P. Merken; J. Genoe; R. Windisch; C. Van Hoof; G. Borghs

doi:10.1117/12.307579

Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications

P. Heremans, P. Merken, J. Genoe, R. Windisch, C. Van Hoof, G. Borghs

Communication, Information, Systems and Sensors

VUB University

Onderzoeksoutput: Bijdrage aan een tijdschrift › Congresartikel › peer review

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We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.

Originele taal-2	Engels
Pagina's (van-tot)	10-15
Aantal pagina's	6
Tijdschrift	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3288
DOI's	https://doi.org/10.1117/12.307579
Status	Gepubliceerd - 1998
Evenement	Optoelectronic Interconnects V - San Jose, CA, Verenigde Staten van Amerika Duur: 28 jan. 1998 → 29 jan. 1998

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abstract = "We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.",

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AU - Heremans, P.

AU - Merken, P.

AU - Genoe, J.

AU - Windisch, R.

AU - Van Hoof, C.

AU - Borghs, G.

PY - 1998

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AB - We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.

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ER -

Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications

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