A 0.5mW high dynamic range fast CMOS charge preamplifier

Munir A. Abdalla; Francesco Cannillo; Patrick Merken; Chris Van Hoof

doi:10.1109/VDAT.2010.5496746

A 0.5mW high dynamic range fast CMOS charge preamplifier

Munir A. Abdalla, Francesco Cannillo, Patrick Merken, Chris Van Hoof

Communication, Information, Systems and Sensors

IMEC

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › peer review

Samenvatting

An ultra low-power fast charge preamplifier implemented in 0.35μm CMOS technology for ion detector readout for space operation is presented. For a 10pF sensor capacitance, the preamplifier achieves a peaking time of 4.5ns and pulse-pair resolution (PPR) of 15ns for an input charge between 50fC and 5pC. It operates in a temperature range between -40°C and 85°C.

Originele taal-2	Engels
Titel	Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010
Pagina's	292-294
Aantal pagina's	3
DOI's	https://doi.org/10.1109/VDAT.2010.5496746
Status	Gepubliceerd - 2010
Evenement	2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010 - Hsin Chu, Taiwan Duur: 26 apr. 2010 → 29 apr. 2010

Publicatie series

Naam	Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010

Congres

Congres	2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010
Land/Regio	Taiwan
Stad	Hsin Chu
Periode	26/04/10 → 29/04/10

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10.1109/VDAT.2010.5496746

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Abdalla, M. A., Cannillo, F., Merken, P., & Van Hoof, C. (2010). A 0.5mW high dynamic range fast CMOS charge preamplifier. In Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010 (blz. 292-294). Artikel 5496746 (Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010). https://doi.org/10.1109/VDAT.2010.5496746

@inproceedings{977e54cfba0f4ac6b9646b3b261f90bb,

title = "A 0.5mW high dynamic range fast CMOS charge preamplifier",

abstract = "An ultra low-power fast charge preamplifier implemented in 0.35μm CMOS technology for ion detector readout for space operation is presented. For a 10pF sensor capacitance, the preamplifier achieves a peaking time of 4.5ns and pulse-pair resolution (PPR) of 15ns for an input charge between 50fC and 5pC. It operates in a temperature range between -40°C and 85°C.",

author = "Abdalla, {Munir A.} and Francesco Cannillo and Patrick Merken and {Van Hoof}, Chris",

year = "2010",

doi = "10.1109/VDAT.2010.5496746",

language = "English",

isbn = "9781424452712",

series = "Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010",

pages = "292--294",

booktitle = "Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010",

note = "2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010 ; Conference date: 26-04-2010 Through 29-04-2010",

}

Abdalla, MA, Cannillo, F, Merken, P & Van Hoof, C 2010, A 0.5mW high dynamic range fast CMOS charge preamplifier. in Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010., 5496746, Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010, blz. 292-294, 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010, Hsin Chu, Taiwan, 26/04/10. https://doi.org/10.1109/VDAT.2010.5496746

A 0.5mW high dynamic range fast CMOS charge preamplifier. / Abdalla, Munir A.; Cannillo, Francesco; Merken, Patrick et al.
Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010. 2010. blz. 292-294 5496746 (Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › peer review

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AU - Cannillo, Francesco

AU - Merken, Patrick

AU - Van Hoof, Chris

PY - 2010

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N2 - An ultra low-power fast charge preamplifier implemented in 0.35μm CMOS technology for ion detector readout for space operation is presented. For a 10pF sensor capacitance, the preamplifier achieves a peaking time of 4.5ns and pulse-pair resolution (PPR) of 15ns for an input charge between 50fC and 5pC. It operates in a temperature range between -40°C and 85°C.

AB - An ultra low-power fast charge preamplifier implemented in 0.35μm CMOS technology for ion detector readout for space operation is presented. For a 10pF sensor capacitance, the preamplifier achieves a peaking time of 4.5ns and pulse-pair resolution (PPR) of 15ns for an input charge between 50fC and 5pC. It operates in a temperature range between -40°C and 85°C.

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SN - 9781424452712

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BT - Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010

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Y2 - 26 April 2010 through 29 April 2010

ER -

A 0.5mW high dynamic range fast CMOS charge preamplifier

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