@inproceedings{37b45d8550b94c62a75a5b14b834369a,
title = "Mid-infrared LEDs using InAs0.71Sb0.29/InAs/Al0.25In0.75As/InAs strained-layer superlattice active layers",
abstract = "The use of strained-layer superlattice is a well-established technique to lower Auger recombination in the active layer of mid-IR LEDs and laser. We have shown by temperature-dependent photoluminescence experiments the Auger recombination can be further reduced by incorporating InAs spacer layer inside symmetrically-strained InAsSb/InAlAs superlattices and that the thickness of the spacer is critical for the improved operation. The layer were grown by molecular beam epitaxy on [001] InAs substrates. The crystalline quality of the grown superlattices is demonstrated by means of transmission electron microscopy, atomic force microscopy and X-ray diffraction measurement.",
author = "\{Van Hoof\}, C. and S. N{\'e}meth and B. Grietens and K. Dessein and J. Genoe and P. Merken and G. Borghs and F. Fuchs and J. Wagner",
note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 2nd International Conference on Advanced Semiconductor Devices And Microsystems, ASDAM 1998 ; Conference date: 05-10-1998 Through 07-10-1998",
year = "1998",
doi = "10.1109/ASDAM.1998.730219",
language = "English",
series = "ASDAM 1998 Conference Proceedings: 2nd International Conference on Advanced Semiconductor Devices And Microsystems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "287--290",
editor = "Frantisek Uherek and Vladimir Drobny and Juraj Breza and Daniel Donoval",
booktitle = "ASDAM 1998 Conference Proceedings",
}