Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications

P. Heremans; P. Merken; J. Genoe; R. Windisch; C. Van Hoof; G. Borghs

doi:10.1117/12.307579

Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications

P. Heremans, P. Merken, J. Genoe, R. Windisch, C. Van Hoof, G. Borghs

Communication, Information, Systems and Sensors

Vrije Universiteit Brussel

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.

langue originale	Anglais
Pages (de - à)	10-15
Nombre de pages	6
journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3288
Les DOIs	https://doi.org/10.1117/12.307579
état	Publié - 1998
Evénement	Optoelectronic Interconnects V - San Jose, CA, États-Unis Durée: 28 janv. 1998 → 29 janv. 1998

Accès au document

10.1117/12.307579

Autres fichiers et liens

Lien vers la publication dans Scopus

Contient cette citation

@article{41abf3b3aa94439ebddbe9e47d9eb4b1,

title = "Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications",

abstract = "We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.",

author = "P. Heremans and P. Merken and J. Genoe and R. Windisch and {Van Hoof}, C. and G. Borghs",

year = "1998",

doi = "10.1117/12.307579",

language = "English",

volume = "3288",

pages = "10--15",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "Optoelectronic Interconnects V ; Conference date: 28-01-1998 Through 29-01-1998",

}

TY - JOUR

T1 - Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications

AU - Heremans, P.

AU - Merken, P.

AU - Genoe, J.

AU - Windisch, R.

AU - Van Hoof, C.

AU - Borghs, G.

PY - 1998

Y1 - 1998

N2 - We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.

AB - We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.

UR - http://www.scopus.com/inward/record.url?scp=0032225489&partnerID=8YFLogxK

U2 - 10.1117/12.307579

DO - 10.1117/12.307579

M3 - Conference article

AN - SCOPUS:0032225489

SN - 0277-786X

VL - 3288

SP - 10

EP - 15

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Optoelectronic Interconnects V

Y2 - 28 January 1998 through 29 January 1998

ER -

Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications

Résumé

Accès au document

Autres fichiers et liens

Empreinte digitale

Contient cette citation