Extended backside-illuminated InGaAs on GaAs IR detectors

Joachim John, Lars Zimmermann, Patrick Merken, Gustaaf Borghs, Chris Van Hoof, Stefan Nemeth

Résultats de recherche: Contribution à un journalArticle de conférenceRevue par des pairs

Résumé

Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3" GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 μm wavelength.

langue originaleAnglais
Pages (de - à)453-459
Nombre de pages7
journalProceedings of SPIE - The International Society for Optical Engineering
Volume4820
Numéro de publication1
Les DOIs
étatPublié - 2002
EvénementInfrared Technology and Applications XXVIII - Seattle, WA, États-Unis
Durée: 7 juil. 200211 juil. 2002

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