Résumé
Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3" GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 μm wavelength.
langue originale | Anglais |
---|---|
Pages (de - à) | 453-459 |
Nombre de pages | 7 |
journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4820 |
Numéro de publication | 1 |
Les DOIs | |
état | Publié - 2002 |
Evénement | Infrared Technology and Applications XXVIII - Seattle, WA, États-Unis Durée: 7 juil. 2002 → 11 juil. 2002 |