Hybrid and CMOS-based infrared detectors

P. Merken; P. De Moor; J. John; L. Zimmermann; M. Gastal; S. C. Jain; C. Van Hoof

Hybrid and CMOS-based infrared detectors

P. Merken, P. De Moor, J. John, L. Zimmermann, M. Gastal, S. C. Jain, C. Van Hoof

Communication, Information, Systems and Sensors

IMEC

Research output: Contribution to journal › Conference article › peer-review

Abstract

Infrared detector arrays can be divided in two distinct classes: hybrid and monolithic arrays. Most hybrid infrared sensors are based on photon detectors and nearly all monolithic infrared sensors make use of thermal detectors. Hybrid detectors involve flip-chip integration of the detector and the readout integrated circuit, necessitate cooling and therefore cause substantial system overhead. Monolithic arrays do not suffer from this system overhead and most notably the resistive microbolometer thermal detectors allow ambient operating temperature. Progress in hybrid III-V based (InGaAs, InAs, InAsSb) infrared detector arrays and towards polySiGe resistive microbolometer arrays will be discussed.

Original language	English
Pages (from-to)	I/-
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3975
Publication status	Published - 2000
Event	IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India Duration: 14 Dec 1999 → 18 Dec 1999

Cite this

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title = "Hybrid and CMOS-based infrared detectors",

abstract = "Infrared detector arrays can be divided in two distinct classes: hybrid and monolithic arrays. Most hybrid infrared sensors are based on photon detectors and nearly all monolithic infrared sensors make use of thermal detectors. Hybrid detectors involve flip-chip integration of the detector and the readout integrated circuit, necessitate cooling and therefore cause substantial system overhead. Monolithic arrays do not suffer from this system overhead and most notably the resistive microbolometer thermal detectors allow ambient operating temperature. Progress in hybrid III-V based (InGaAs, InAs, InAsSb) infrared detector arrays and towards polySiGe resistive microbolometer arrays will be discussed.",

author = "P. Merken and {De Moor}, P. and J. John and L. Zimmermann and M. Gastal and Jain, {S. C.} and {Van Hoof}, C.",

year = "2000",

language = "English",

volume = "3975",

pages = "I/--",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices ; Conference date: 14-12-1999 Through 18-12-1999",

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TY - JOUR

T1 - Hybrid and CMOS-based infrared detectors

AU - Merken, P.

AU - De Moor, P.

AU - John, J.

AU - Zimmermann, L.

AU - Gastal, M.

AU - Jain, S. C.

AU - Van Hoof, C.

PY - 2000

Y1 - 2000

N2 - Infrared detector arrays can be divided in two distinct classes: hybrid and monolithic arrays. Most hybrid infrared sensors are based on photon detectors and nearly all monolithic infrared sensors make use of thermal detectors. Hybrid detectors involve flip-chip integration of the detector and the readout integrated circuit, necessitate cooling and therefore cause substantial system overhead. Monolithic arrays do not suffer from this system overhead and most notably the resistive microbolometer thermal detectors allow ambient operating temperature. Progress in hybrid III-V based (InGaAs, InAs, InAsSb) infrared detector arrays and towards polySiGe resistive microbolometer arrays will be discussed.

AB - Infrared detector arrays can be divided in two distinct classes: hybrid and monolithic arrays. Most hybrid infrared sensors are based on photon detectors and nearly all monolithic infrared sensors make use of thermal detectors. Hybrid detectors involve flip-chip integration of the detector and the readout integrated circuit, necessitate cooling and therefore cause substantial system overhead. Monolithic arrays do not suffer from this system overhead and most notably the resistive microbolometer thermal detectors allow ambient operating temperature. Progress in hybrid III-V based (InGaAs, InAs, InAsSb) infrared detector arrays and towards polySiGe resistive microbolometer arrays will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=0033682914&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033682914

SN - 0277-786X

VL - 3975

SP - I/-

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices

Y2 - 14 December 1999 through 18 December 1999

ER -

Hybrid and CMOS-based infrared detectors

Abstract

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