Abstract
We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.
| Original language | English |
|---|---|
| Pages (from-to) | 10-15 |
| Number of pages | 6 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3288 |
| DOIs | |
| Publication status | Published - 1998 |
| Event | Optoelectronic Interconnects V - San Jose, CA, United States Duration: 28 Jan 1998 → 29 Jan 1998 |