Extended wavelength InGaAs on GaAs hybrid image sensors

Joachim John; Lars Zimmermann; Patrick Merken; Stefan De Groote; Gustaaf Borghs; Chris Van Hoof; Stefan Nemeth; Thierry Colin

doi:10.1117/12.504519

Extended wavelength InGaAs on GaAs hybrid image sensors

Joachim John, Lars Zimmermann, Patrick Merken, Stefan De Groote, Gustaaf Borghs, Chris Van Hoof, Stefan Nemeth, Thierry Colin

Communication, Information, Systems and Sensors

Research output: Contribution to journal › Conference article › peer-review

Abstract

Short wavelength infrared (SWIR) photovoltaic diode structures made of InGaAs material were grown on GaAs by means of molecular beam epitaxy. Growth quality and composition of the layers are determined by HRXRD. The electrical characterization is performed by Current-Bias characterization (proposal) and spectral resolved measurements to determine the resistance area product (R ₀A) and the spectral responsivity (R) of diodes. The processing is performed with standard photolithography and micro-structuring techniques aiming at the production of ID and 2D infrared camera arrays. The diced IR sensor is flip chip assembled on a Silicon read out integrated circuit (ROIC). Linear arrays of 256 pixels with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Measures of electrical interconnection yield will be shown. Functionality is proven for different applications up to 2.5 μm wavelength.

Original language	English
Pages (from-to)	263-270
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5152
DOIs	https://doi.org/10.1117/12.504519
Publication status	Published - 2003
Event	Infrared Spaceborne Remote Sensing XI - San Diego, CA, United States Duration: 6 Aug 2003 → 8 Aug 2003

Keywords

Extended ihgaas
Focal plane array
Hybridization
Linear array
SWIR

Access to Document

10.1117/12.504519

Cite this

@article{e6e1add36c3f4d278dc46813e274de4c,

title = "Extended wavelength InGaAs on GaAs hybrid image sensors",

abstract = "Short wavelength infrared (SWIR) photovoltaic diode structures made of InGaAs material were grown on GaAs by means of molecular beam epitaxy. Growth quality and composition of the layers are determined by HRXRD. The electrical characterization is performed by Current-Bias characterization (proposal) and spectral resolved measurements to determine the resistance area product (R 0A) and the spectral responsivity (R) of diodes. The processing is performed with standard photolithography and micro-structuring techniques aiming at the production of ID and 2D infrared camera arrays. The diced IR sensor is flip chip assembled on a Silicon read out integrated circuit (ROIC). Linear arrays of 256 pixels with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Measures of electrical interconnection yield will be shown. Functionality is proven for different applications up to 2.5 μm wavelength.",

keywords = "Extended ihgaas, Focal plane array, Hybridization, Linear array, SWIR",

author = "Joachim John and Lars Zimmermann and Patrick Merken and {De Groote}, Stefan and Gustaaf Borghs and {Van Hoof}, Chris and Stefan Nemeth and Thierry Colin",

year = "2003",

doi = "10.1117/12.504519",

language = "English",

volume = "5152",

pages = "263--270",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "Infrared Spaceborne Remote Sensing XI ; Conference date: 06-08-2003 Through 08-08-2003",

}

TY - JOUR

T1 - Extended wavelength InGaAs on GaAs hybrid image sensors

AU - John, Joachim

AU - Zimmermann, Lars

AU - Merken, Patrick

AU - De Groote, Stefan

AU - Borghs, Gustaaf

AU - Van Hoof, Chris

AU - Nemeth, Stefan

AU - Colin, Thierry

PY - 2003

Y1 - 2003

N2 - Short wavelength infrared (SWIR) photovoltaic diode structures made of InGaAs material were grown on GaAs by means of molecular beam epitaxy. Growth quality and composition of the layers are determined by HRXRD. The electrical characterization is performed by Current-Bias characterization (proposal) and spectral resolved measurements to determine the resistance area product (R 0A) and the spectral responsivity (R) of diodes. The processing is performed with standard photolithography and micro-structuring techniques aiming at the production of ID and 2D infrared camera arrays. The diced IR sensor is flip chip assembled on a Silicon read out integrated circuit (ROIC). Linear arrays of 256 pixels with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Measures of electrical interconnection yield will be shown. Functionality is proven for different applications up to 2.5 μm wavelength.

AB - Short wavelength infrared (SWIR) photovoltaic diode structures made of InGaAs material were grown on GaAs by means of molecular beam epitaxy. Growth quality and composition of the layers are determined by HRXRD. The electrical characterization is performed by Current-Bias characterization (proposal) and spectral resolved measurements to determine the resistance area product (R 0A) and the spectral responsivity (R) of diodes. The processing is performed with standard photolithography and micro-structuring techniques aiming at the production of ID and 2D infrared camera arrays. The diced IR sensor is flip chip assembled on a Silicon read out integrated circuit (ROIC). Linear arrays of 256 pixels with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Measures of electrical interconnection yield will be shown. Functionality is proven for different applications up to 2.5 μm wavelength.

KW - Extended ihgaas

KW - Focal plane array

KW - Hybridization

KW - Linear array

KW - SWIR

UR - http://www.scopus.com/inward/record.url?scp=2342644062&partnerID=8YFLogxK

U2 - 10.1117/12.504519

DO - 10.1117/12.504519

M3 - Conference article

AN - SCOPUS:2342644062

SN - 0277-786X

VL - 5152

SP - 263

EP - 270

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Infrared Spaceborne Remote Sensing XI

Y2 - 6 August 2003 through 8 August 2003

ER -

Extended wavelength InGaAs on GaAs hybrid image sensors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this