Extended backside-illuminated InGaAs on GaAs IR detectors

Joachim John; Lars Zimmermann; Patrick Merken; Gustaaf Borghs; Chris Van Hoof; Stefan Nemeth

doi:10.1117/12.450563

Extended backside-illuminated InGaAs on GaAs IR detectors

Joachim John, Lars Zimmermann, Patrick Merken, Gustaaf Borghs, Chris Van Hoof, Stefan Nemeth

Communication, Information, Systems and Sensors

Research output: Contribution to journal › Conference article › peer-review

Abstract

Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3" GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In_0.8Ga_0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R₀A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 μm wavelength.

Original language	English
Pages (from-to)	453-459
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4820
Issue number	1
DOIs	https://doi.org/10.1117/12.450563
Publication status	Published - 2002
Event	Infrared Technology and Applications XXVIII - Seattle, WA, United States Duration: 7 Jul 2002 → 11 Jul 2002

Keywords

Back-side illumination
Extended InGaAs
Flip-chip bonding
Focal plane array
Linear arra
SWIR

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10.1117/12.450563

Cite this

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title = "Extended backside-illuminated InGaAs on GaAs IR detectors",

abstract = "Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3{"} GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 μm wavelength.",

keywords = "Back-side illumination, Extended InGaAs, Flip-chip bonding, Focal plane array, Linear arra, SWIR",

author = "Joachim John and Lars Zimmermann and Patrick Merken and Gustaaf Borghs and {Van Hoof}, Chris and Stefan Nemeth",

year = "2002",

doi = "10.1117/12.450563",

language = "English",

volume = "4820",

pages = "453--459",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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number = "1",

note = "Infrared Technology and Applications XXVIII ; Conference date: 07-07-2002 Through 11-07-2002",

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TY - JOUR

T1 - Extended backside-illuminated InGaAs on GaAs IR detectors

AU - John, Joachim

AU - Zimmermann, Lars

AU - Merken, Patrick

AU - Borghs, Gustaaf

AU - Van Hoof, Chris

AU - Nemeth, Stefan

PY - 2002

Y1 - 2002

N2 - Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3" GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 μm wavelength.

AB - Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3" GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 μm wavelength.

KW - Back-side illumination

KW - Extended InGaAs

KW - Flip-chip bonding

KW - Focal plane array

KW - Linear arra

KW - SWIR

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U2 - 10.1117/12.450563

DO - 10.1117/12.450563

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SN - 0277-786X

VL - 4820

SP - 453

EP - 459

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - 1

T2 - Infrared Technology and Applications XXVIII

Y2 - 7 July 2002 through 11 July 2002

ER -

Extended backside-illuminated InGaAs on GaAs IR detectors

Abstract

Keywords

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