A cryogenic ADC operating down to 4.2K

Ybe Cretan; Patrick Merken; Willy Sansen; Robert Mertens; Chris Van Hoof

doi:10.1109/ISSCC.2007.373497

A cryogenic ADC operating down to 4.2K

Ybe Cretan, Patrick Merken, Willy Sansen, Robert Mertens, Chris Van Hoof

Communication, Information, Systems and Sensors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A SAR ADC is designed to operate from room temperature down to 4.2K, as needed by cryogenic sensor systems. The ADC is robust to cryogenic temperature-induced transistor anomalies. It has an INL of -0.8(0.5)LSB and DNL of 1.1 (0.4)LSB at 4.2K(300K). It draws 70μA for a 200pF output capacitor at 3kHz sampling rate and 5V supply.

Original language	English
Title of host publication	2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	468-470
Number of pages	3
ISBN (Print)	1424408539, 9781424408535
DOIs	https://doi.org/10.1109/ISSCC.2007.373497
Publication status	Published - 2007
Event	54th IEEE International Solid-State Circuits Conference, ISSCC 2007 - San Francisco, CA, United States Duration: 11 Feb 2007 → 15 Feb 2007

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)	0193-6530

Conference

Conference	54th IEEE International Solid-State Circuits Conference, ISSCC 2007
Country/Territory	United States
City	San Francisco, CA
Period	11/02/07 → 15/02/07

Access to Document

10.1109/ISSCC.2007.373497

Cite this

Cretan, Y., Merken, P., Sansen, W., Mertens, R., & Van Hoof, C. (2007). A cryogenic ADC operating down to 4.2K. In 2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers (pp. 468-470). Article 4242468 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2007.373497

@inproceedings{d75118219c2e4d5e91b1cea31e68afbe,

title = "A cryogenic ADC operating down to 4.2K",

abstract = "A SAR ADC is designed to operate from room temperature down to 4.2K, as needed by cryogenic sensor systems. The ADC is robust to cryogenic temperature-induced transistor anomalies. It has an INL of -0.8(0.5)LSB and DNL of 1.1 (0.4)LSB at 4.2K(300K). It draws 70μA for a 200pF output capacitor at 3kHz sampling rate and 5V supply.",

author = "Ybe Cretan and Patrick Merken and Willy Sansen and Robert Mertens and {Van Hoof}, Chris",

year = "2007",

doi = "10.1109/ISSCC.2007.373497",

language = "English",

isbn = "1424408539",

series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "468--470",

booktitle = "2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers",

note = "54th IEEE International Solid-State Circuits Conference, ISSCC 2007 ; Conference date: 11-02-2007 Through 15-02-2007",

}

Cretan, Y, Merken, P, Sansen, W, Mertens, R & Van Hoof, C 2007, A cryogenic ADC operating down to 4.2K. in 2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers., 4242468, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 468-470, 54th IEEE International Solid-State Circuits Conference, ISSCC 2007, San Francisco, CA, United States, 11/02/07. https://doi.org/10.1109/ISSCC.2007.373497

A cryogenic ADC operating down to 4.2K. / Cretan, Ybe; Merken, Patrick; Sansen, Willy et al.
2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2007. p. 468-470 4242468 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A cryogenic ADC operating down to 4.2K

AU - Cretan, Ybe

AU - Merken, Patrick

AU - Sansen, Willy

AU - Mertens, Robert

AU - Van Hoof, Chris

PY - 2007

Y1 - 2007

N2 - A SAR ADC is designed to operate from room temperature down to 4.2K, as needed by cryogenic sensor systems. The ADC is robust to cryogenic temperature-induced transistor anomalies. It has an INL of -0.8(0.5)LSB and DNL of 1.1 (0.4)LSB at 4.2K(300K). It draws 70μA for a 200pF output capacitor at 3kHz sampling rate and 5V supply.

AB - A SAR ADC is designed to operate from room temperature down to 4.2K, as needed by cryogenic sensor systems. The ADC is robust to cryogenic temperature-induced transistor anomalies. It has an INL of -0.8(0.5)LSB and DNL of 1.1 (0.4)LSB at 4.2K(300K). It draws 70μA for a 200pF output capacitor at 3kHz sampling rate and 5V supply.

UR - http://www.scopus.com/inward/record.url?scp=34548855708&partnerID=8YFLogxK

U2 - 10.1109/ISSCC.2007.373497

DO - 10.1109/ISSCC.2007.373497

M3 - Conference contribution

AN - SCOPUS:34548855708

SN - 1424408539

SN - 9781424408535

T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SP - 468

EP - 470

BT - 2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 54th IEEE International Solid-State Circuits Conference, ISSCC 2007

Y2 - 11 February 2007 through 15 February 2007

ER -

Cretan Y, Merken P, Sansen W, Mertens R, Van Hoof C. A cryogenic ADC operating down to 4.2K. In 2007 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2007. p. 468-470. 4242468. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC.2007.373497

A cryogenic ADC operating down to 4.2K

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this