A 0.5mW high dynamic range fast CMOS charge preamplifier

Munir A. Abdalla; Francesco Cannillo; Patrick Merken; Chris Van Hoof

doi:10.1109/VDAT.2010.5496746

A 0.5mW high dynamic range fast CMOS charge preamplifier

Munir A. Abdalla
, Francesco Cannillo
, Patrick Merken
, Chris Van Hoof

Communication, Information, Systems and Sensors

IMEC

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

An ultra low-power fast charge preamplifier implemented in 0.35μm CMOS technology for ion detector readout for space operation is presented. For a 10pF sensor capacitance, the preamplifier achieves a peaking time of 4.5ns and pulse-pair resolution (PPR) of 15ns for an input charge between 50fC and 5pC. It operates in a temperature range between -40°C and 85°C.

Original language	English
Title of host publication	Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010
Pages	292-294
Number of pages	3
DOIs	https://doi.org/10.1109/VDAT.2010.5496746
Publication status	Published - 2010
Event	2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010 - Hsin Chu, Taiwan, Province of China Duration: 26 Apr 2010 → 29 Apr 2010

Publication series

Name	Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010

Conference

Conference	2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010
Country/Territory	Taiwan, Province of China
City	Hsin Chu
Period	26/04/10 → 29/04/10

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10.1109/VDAT.2010.5496746

Cite this

Abdalla, M. A., Cannillo, F., Merken, P., & Van Hoof, C. (2010). A 0.5mW high dynamic range fast CMOS charge preamplifier. In Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010 (pp. 292-294). Article 5496746 (Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010). https://doi.org/10.1109/VDAT.2010.5496746

@inproceedings{977e54cfba0f4ac6b9646b3b261f90bb,

title = "A 0.5mW high dynamic range fast CMOS charge preamplifier",

abstract = "An ultra low-power fast charge preamplifier implemented in 0.35μm CMOS technology for ion detector readout for space operation is presented. For a 10pF sensor capacitance, the preamplifier achieves a peaking time of 4.5ns and pulse-pair resolution (PPR) of 15ns for an input charge between 50fC and 5pC. It operates in a temperature range between -40°C and 85°C.",

author = "Abdalla, \{Munir A.\} and Francesco Cannillo and Patrick Merken and \{Van Hoof\}, Chris",

year = "2010",

doi = "10.1109/VDAT.2010.5496746",

language = "English",

isbn = "9781424452712",

series = "Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010",

pages = "292--294",

booktitle = "Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010",

note = "2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010 ; Conference date: 26-04-2010 Through 29-04-2010",

}

Abdalla, MA, Cannillo, F, Merken, P & Van Hoof, C 2010, A 0.5mW high dynamic range fast CMOS charge preamplifier. in Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010., 5496746, Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010, pp. 292-294, 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010, Hsin Chu, Taiwan, Province of China, 26/04/10. https://doi.org/10.1109/VDAT.2010.5496746

A 0.5mW high dynamic range fast CMOS charge preamplifier. / Abdalla, Munir A.; Cannillo, Francesco; Merken, Patrick et al.
Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010. 2010. p. 292-294 5496746 (Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 0.5mW high dynamic range fast CMOS charge preamplifier

AU - Abdalla, Munir A.

AU - Cannillo, Francesco

AU - Merken, Patrick

AU - Van Hoof, Chris

PY - 2010

Y1 - 2010

N2 - An ultra low-power fast charge preamplifier implemented in 0.35μm CMOS technology for ion detector readout for space operation is presented. For a 10pF sensor capacitance, the preamplifier achieves a peaking time of 4.5ns and pulse-pair resolution (PPR) of 15ns for an input charge between 50fC and 5pC. It operates in a temperature range between -40°C and 85°C.

AB - An ultra low-power fast charge preamplifier implemented in 0.35μm CMOS technology for ion detector readout for space operation is presented. For a 10pF sensor capacitance, the preamplifier achieves a peaking time of 4.5ns and pulse-pair resolution (PPR) of 15ns for an input charge between 50fC and 5pC. It operates in a temperature range between -40°C and 85°C.

UR - https://www.scopus.com/pages/publications/78049354318

U2 - 10.1109/VDAT.2010.5496746

DO - 10.1109/VDAT.2010.5496746

M3 - Conference contribution

AN - SCOPUS:78049354318

SN - 9781424452712

T3 - Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010

SP - 292

EP - 294

BT - Proceedings of 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010

T2 - 2010 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2010

Y2 - 26 April 2010 through 29 April 2010

ER -

A 0.5mW high dynamic range fast CMOS charge preamplifier

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