Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications

P. Heremans; P. Merken; J. Genoe; R. Windisch; C. Van Hoof; G. Borghs

doi:10.1117/12.307579

Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications

P. Heremans, P. Merken, J. Genoe, R. Windisch, C. Van Hoof, G. Borghs

Communication, Information, Systems and Sensors

Vrije Universiteit Brussel

Publikation: Beitrag in Fachzeitschrift › Konferenzartikel › Begutachtung

Abstract

We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.

Originalsprache	Englisch
Seiten (von - bis)	10-15
Seitenumfang	6
Fachzeitschrift	Proceedings of SPIE - The International Society for Optical Engineering
Jahrgang	3288
DOIs	https://doi.org/10.1117/12.307579
Publikationsstatus	Veröffentlicht - 1998
Veranstaltung	Optoelectronic Interconnects V - San Jose, CA, USA/Vereinigte Staaten Dauer: 28 Jan. 1998 → 29 Jan. 1998

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abstract = "We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.",

author = "P. Heremans and P. Merken and J. Genoe and R. Windisch and {Van Hoof}, C. and G. Borghs",

year = "1998",

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AU - Heremans, P.

AU - Merken, P.

AU - Genoe, J.

AU - Windisch, R.

AU - Van Hoof, C.

AU - Borghs, G.

PY - 1998

Y1 - 1998

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AB - We present an array of GaAs-based light-emitting diodes emitting at 850 nm, which is designed to be flip-chip joined on carriers like a silicon CMOS circuit. The light-emitting diodes are grown by MBE. After processing of the array and flip-chip joining using Indium-bumps, the substrate of the LED array is removed completely. Individual light-emitting diodes reach an external quantum efficiency of 3.3% after the complete process.

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DO - 10.1117/12.307579

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Y2 - 28 January 1998 through 29 January 1998

ER -

Flip-chip joined 8X8 array of bottom - emitting 850 nm light-emitting diodes for interconnect applications

Abstract

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