Extended-wavelength InGaAs-on-GaAs infrared focal-plane array

P. Merken; L. Zimmermann; J. John; G. Borghs; C. Van Hoof; S. Nemeth

doi:10.1049/el:20020402

Extended-wavelength InGaAs-on-GaAs infrared focal-plane array

P. Merken, L. Zimmermann, J. John, G. Borghs, C. Van Hoof, S. Nemeth

Communication, Information, Systems and Sensors

Publikation: Beitrag in Fachzeitschrift › Artikel › Begutachtung

Abstract

A 320 × 256 element hybrid infrared array is presented which consists of In_0.78Ga_0.22As photodiodes grown by molecular beam epitaxy on a GaAs substrate. The interconnection yield of the hybrid indium-bump process is above 97%. Electro-optical sensor characteristics are discussed.

Originalsprache	Englisch
Seiten (von - bis)	588-590
Seitenumfang	3
Fachzeitschrift	Electronics Letters
Jahrgang	38
Ausgabenummer	12
DOIs	https://doi.org/10.1049/el:20020402
Publikationsstatus	Veröffentlicht - 6 Juni 2002

Zugriff auf Dokument

10.1049/el:20020402

Andere Dateien und Links

Verknüpfung zur Publikation in Scopus

Dieses zitieren

@article{8965222ec0d74399a21957cfb87c72e2,

title = "Extended-wavelength InGaAs-on-GaAs infrared focal-plane array",

abstract = "A 320 × 256 element hybrid infrared array is presented which consists of In0.78Ga0.22As photodiodes grown by molecular beam epitaxy on a GaAs substrate. The interconnection yield of the hybrid indium-bump process is above 97%. Electro-optical sensor characteristics are discussed.",

author = "P. Merken and L. Zimmermann and J. John and G. Borghs and {Van Hoof}, C. and S. Nemeth",

year = "2002",

month = jun,

day = "6",

doi = "10.1049/el:20020402",

language = "English",

volume = "38",

pages = "588--590",

journal = "Electronics Letters",

issn = "0013-5194",

number = "12",

}

TY - JOUR

T1 - Extended-wavelength InGaAs-on-GaAs infrared focal-plane array

AU - Merken, P.

AU - Zimmermann, L.

AU - John, J.

AU - Borghs, G.

AU - Van Hoof, C.

AU - Nemeth, S.

PY - 2002/6/6

Y1 - 2002/6/6

N2 - A 320 × 256 element hybrid infrared array is presented which consists of In0.78Ga0.22As photodiodes grown by molecular beam epitaxy on a GaAs substrate. The interconnection yield of the hybrid indium-bump process is above 97%. Electro-optical sensor characteristics are discussed.

AB - A 320 × 256 element hybrid infrared array is presented which consists of In0.78Ga0.22As photodiodes grown by molecular beam epitaxy on a GaAs substrate. The interconnection yield of the hybrid indium-bump process is above 97%. Electro-optical sensor characteristics are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0037030477&partnerID=8YFLogxK

U2 - 10.1049/el:20020402

DO - 10.1049/el:20020402

M3 - Article

AN - SCOPUS:0037030477

SN - 0013-5194

VL - 38

SP - 588

EP - 590

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Extended-wavelength InGaAs-on-GaAs infrared focal-plane array

Abstract

Zugriff auf Dokument

Andere Dateien und Links

Fingerprint

Dieses zitieren