Extended backside-illuminated InGaAs on GaAs IR detectors

Joachim John; Lars Zimmermann; Patrick Merken; Gustaaf Borghs; Chris Van Hoof; Stefan Nemeth

doi:10.1117/12.450563

Extended backside-illuminated InGaAs on GaAs IR detectors

Joachim John, Lars Zimmermann, Patrick Merken, Gustaaf Borghs, Chris Van Hoof, Stefan Nemeth

Communication, Information, Systems and Sensors

Publikation: Beitrag in Fachzeitschrift › Konferenzartikel › Begutachtung

Abstract

Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3" GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In_0.8Ga_0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R₀A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 μm wavelength.

Originalsprache	Englisch
Seiten (von - bis)	453-459
Seitenumfang	7
Fachzeitschrift	Proceedings of SPIE - The International Society for Optical Engineering
Jahrgang	4820
Ausgabenummer	1
DOIs	https://doi.org/10.1117/12.450563
Publikationsstatus	Veröffentlicht - 2002
Veranstaltung	Infrared Technology and Applications XXVIII - Seattle, WA, USA/Vereinigte Staaten Dauer: 7 Juli 2002 → 11 Juli 2002

Zugriff auf Dokument

10.1117/12.450563

Andere Dateien und Links

Verknüpfung zur Publikation in Scopus

Dieses zitieren

@article{c1ffbd96cc934f40ad9f5ddc66c078d2,

title = "Extended backside-illuminated InGaAs on GaAs IR detectors",

abstract = "Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3{"} GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 μm wavelength.",

keywords = "Back-side illumination, Extended InGaAs, Flip-chip bonding, Focal plane array, Linear arra, SWIR",

author = "Joachim John and Lars Zimmermann and Patrick Merken and Gustaaf Borghs and {Van Hoof}, Chris and Stefan Nemeth",

year = "2002",

doi = "10.1117/12.450563",

language = "English",

volume = "4820",

pages = "453--459",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

number = "1",

note = "Infrared Technology and Applications XXVIII ; Conference date: 07-07-2002 Through 11-07-2002",

}

TY - JOUR

T1 - Extended backside-illuminated InGaAs on GaAs IR detectors

AU - John, Joachim

AU - Zimmermann, Lars

AU - Merken, Patrick

AU - Borghs, Gustaaf

AU - Van Hoof, Chris

AU - Nemeth, Stefan

PY - 2002

Y1 - 2002

N2 - Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3" GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 μm wavelength.

AB - Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3" GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 μm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 μm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 μm wavelength.

KW - Back-side illumination

KW - Extended InGaAs

KW - Flip-chip bonding

KW - Focal plane array

KW - Linear arra

KW - SWIR

UR - http://www.scopus.com/inward/record.url?scp=0038324491&partnerID=8YFLogxK

U2 - 10.1117/12.450563

DO - 10.1117/12.450563

M3 - Conference article

AN - SCOPUS:0038324491

SN - 0277-786X

VL - 4820

SP - 453

EP - 459

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - 1

T2 - Infrared Technology and Applications XXVIII

Y2 - 7 July 2002 through 11 July 2002

ER -

Extended backside-illuminated InGaAs on GaAs IR detectors

Abstract

Zugriff auf Dokument

Andere Dateien und Links

Fingerprint

Dieses zitieren